The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2013
Filed:
Dec. 02, 2010
Jing Tang, Santa Clara, CA (US);
Nitin Ingle, San Jose, CA (US);
Dongqing Yang, San Jose, CA (US);
Shankar Venkataraman, San Jose, CA (US);
Jing Tang, Santa Clara, CA (US);
Nitin Ingle, San Jose, CA (US);
Dongqing Yang, San Jose, CA (US);
Shankar Venkataraman, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of etching silicon oxide from a narrow trench and a wide trench (or open area) is described which allows the etch in the wide trench to progress further than the etch in the narrow trench. The method includes two dry etch cycles. The first dry etch cycle involves a low intensity or abbreviated sublimation step which leaves solid residue in the narrow trench. The remaining solid residue inhibits etch progress in the narrow trench during the second dry etch cycle allowing the etch in the wide trench to overtake the etch in the narrow trench.