The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2013
Filed:
Mar. 03, 2011
Hamed Lakrout, Midland, MI (US);
Jinjie Shi, Midland, MI (US);
Joseph Letizia, Philadelphia, PA (US);
Xu LI, Potomac, MD (US);
Thomas H. Kalantar, Midland, MI (US);
Francis Kelley, Smyrna, DE (US);
J. Keith Harris, Midland, MI (US);
Christopher J. Tucker, Midland, MI (US);
Hamed Lakrout, Midland, MI (US);
Jinjie Shi, Midland, MI (US);
Joseph Letizia, Philadelphia, PA (US);
Xu Li, Potomac, MD (US);
Thomas H. Kalantar, Midland, MI (US);
Francis Kelley, Smyrna, DE (US);
J. Keith Harris, Midland, MI (US);
Christopher J. Tucker, Midland, MI (US);
Rohm and Haas Electronic Materials CMP Holdings, Inc., Newark, DE (US);
Abstract
A chemical mechanical polishing composition useful for chemical mechanical polishing a semiconductor wafer containing an interconnect metal is provided, comprising, as initial components: water; an azole inhibitor; an alkali metal organic surfactant; a hydrotrope; a phosphorus containing agent; a water soluble cellulose; optionally, a non-saccharide water soluble polymer; optionally, a water soluble acid compound of formula I, wherein R is selected from a hydrogen and a Calkyl group, and wherein x is 1 or 2; optionally, a complexing agent; optionally, an oxidizer; optionally, an organic solvent; and, optionally, an abrasive. Also, provided is a method of preparing a chemical mechanical polishing composition of the present invention and a method for chemical mechanical polishing of a substrate, comprising: providing a substrate, wherein the substrate is a semiconductor wafer having copper interconnects; providing a chemical mechanical polishing composition of the present invention; providing a chemical mechanical polishing pad; creating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate with a down force of 0.69 to 34.5 kPa; and, dispensing the chemical mechanical polishing composition onto the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate; wherein the chemical mechanical polishing composition exhibits a pH adjusted to a pH of 2 to 6 through the addition of at least one of phosphoric acid, magnesium hydroxide and lithium hydroxide.