The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2013
Filed:
Dec. 16, 2011
Qinghua Zhong, Fremont, CA (US);
Yoshie Kimura, Castro Valley, CA (US);
Tae Won Kim, Dublin, CA (US);
Qian Fu, Pleasanton, CA (US);
Gladys Lo, Fremont, CA (US);
Ganesh Upadhyaya, Fremont, CA (US);
Yoko Yamaguchi, Union City, CA (US);
Qinghua Zhong, Fremont, CA (US);
Yoshie Kimura, Castro Valley, CA (US);
Tae Won Kim, Dublin, CA (US);
Qian Fu, Pleasanton, CA (US);
Gladys Lo, Fremont, CA (US);
Ganesh Upadhyaya, Fremont, CA (US);
Yoko Yamaguchi, Union City, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method for forming devices with silicon gates over a substrate is provided. Silicon nitride spacers are formed on sides of the silicon gates. An ion implant is provided using the silicon nitride spacers as masks to form ion implant regions. A nonconformal layer is selectively deposited over the spacers and gates that selectively deposits a thicker layer on tops of the gates and spacers and between spacers than on sidewalls of the silicon nitride spacers. Sidewalls of the nonconformal layer are etched away on sidewalls of the silicon nitride spacers. The silicon nitride spacers are trimmed.