The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8426319 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 23, 2013

Filed:

May. 28, 2008
Applicants:

Nabil G. Mistkawi, Keizer, OR (US);

Lourdes Dominguez, Beaverton, OR (US);

Inventors:

Nabil G. Mistkawi, Keizer, OR (US);

Lourdes Dominguez, Beaverton, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

An etching solution for a metal hard mask. The etching solution comprises a mixture of a dilute HF (hydrofluoric acid) and a silicon containing precursor. The etching solution also comprises a surfactant agent, a carboxylic acid, and a copper corrosion inhibitor. The etching solution is selectively toward etching the metal hard mask material (e.g., Titanium) while suppressing Tungsten, Copper, oxide dielectric material, and carbon doped oxide.


Find Patent Forward Citations

Mistkawi, Nabil. (2013). Composition for etching a metal hard mask material in semiconductor processing (U.S. Patent No. 8426319). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8426319

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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