The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2013
Filed:
Nov. 25, 2009
Chun-jung Lin, Hsinchu, TW;
Yu-jen Wang, Hsinchu, TW;
Ya-chen Kao, Taoyuan County, TW;
Wen-cheng Chen, Hsinchu, TW;
Ming-te Liu, Taipei, TW;
Chun-Jung Lin, Hsinchu, TW;
Yu-Jen Wang, Hsinchu, TW;
Ya-Chen Kao, Taoyuan County, TW;
Wen-Cheng Chen, Hsinchu, TW;
Ming-Te Liu, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Apparatus and methods are disclosed herein for a reverse-connection STT MTJ element of a MRAM to overcome the source degeneration effect when switching the magnetization of the MTJ element from the parallel to the anti-parallel direction. A memory cell of a MRAM having a reverse-connection MTJ element includes a switching device having a source, a gate, and a drain, and a reverse-connection MTJ device having a free layer, a fixed layer, and an insulator layer interposed between the free layer and the fixed layer. The free layer of the reverse-connection MTJ device is connected to the drain of the switching device and the fixed layer is connected to a bit line (BL). The reverse-connection MTJ device applies the lower Icapability of the memory cell caused by the source degeneration effect to the less stringent I(AP->P) while preserving the higher Icapability for the more demanding I(P->AP).