The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2013
Filed:
Mar. 02, 2012
Woo Jin Lee, Kyounggi-Do, KR;
Kuo-wei Hong, Tama, JP;
Akira Shimizu, Kai, JP;
Daekyun Jeong, Seoul, KR;
Woo Jin Lee, Kyounggi-Do, KR;
Kuo-Wei Hong, Tama, JP;
Akira Shimizu, Kai, JP;
Daekyun Jeong, Seoul, KR;
ASM Japan K.K., Tokyo, JP;
Abstract
A method of forming a film on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which the semiconductor substrate is placed; introducing a precursor in pulses of less than 1.0-second duration into the reaction space wherein the reactive gas and the rare gas are introduced; exiting a plasma in pulses of less than 1.0-second duration immediately after the precursor is shut off; and maintaining the reactive gas and the rare gas as a purge of less than 2.0-second duration.