The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2013
Filed:
Jun. 15, 2007
Shau-lin Shue, Hsinchu, TW;
Chao-an Jong, Hsinchu, TW;
Shau-Lin Shue, Hsinchu, TW;
Chao-An Jong, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A semiconductor structure includes a transistor over a substrate, the transistor comprising a gate and a contact region, which is adjacent to the gate and within the substrate. A first dielectric layer is over the contact region. A contact structure is within the first dielectric layer and over the contact region. A first electrode and a second electrode are within the first dielectric layer, wherein at least one of the first electrode and the second electrode is over the contact structure. The first electrode and second electrodes may be laterally or vertically separated. A phase change structure is disposed between the first electrode and the second electrode. The phase change structure includes at least one spacer within the first dielectric layer and a phase change material (PCM) layer over the spacer.