The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8409965 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 02, 2013

Filed:

Apr. 26, 2011
Applicants:

Hsing-kuo Hsia, Jhubei, TW;

Ching-hua Chiu, Hsinchu, TW;

Inventors:

Hsing-Kuo Hsia, Jhubei, TW;

Ching-Hua Chiu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present disclosure provides one embodiment of a method for fabricating light-emitting diode (LED) devices. The method includes forming a nano-mask layer on a first substrate, wherein the nano-mask layer has a randomly arranged grain pattern; growing a first epitaxy semiconductor layer in the first substrate, forming a nano-composite layer; growing a number of epitaxy semiconductor layers over the nano-composite layer; bonding a second substrate to the epitaxy semiconductor layers from a first side of the epitaxy semiconductor layers; applying a radiation energy to the nano-composite layer; and separating the first substrate from the epitaxy semiconductor layers from a second side of the epitaxy semiconductor layers.


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Hsia, Hsing-Kuo. (2013). Method and structure for led with nano-patterned substrate (U.S. Patent No. 8409965). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8409965

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