The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 02, 2013

Filed:

Apr. 14, 2008
Applicants:

Suketu Arun Parikh, San Jose, CA (US);

Olov B. Karlsson, San Jose, CA (US);

Yun Sun, Saratoga, CA (US);

Shankar Sinha, Redwood City, CA (US);

Timothy Thurgate, Sunnyvale, CA (US);

Inventors:

Suketu Arun Parikh, San Jose, CA (US);

Olov B. Karlsson, San Jose, CA (US);

Yun Sun, Saratoga, CA (US);

Shankar Sinha, Redwood City, CA (US);

Timothy Thurgate, Sunnyvale, CA (US);

Assignee:

Spansion LLC, Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of forming an electronic device including forming a first trench in a workpiece including a substrate, the first trench having side walls and a bottom surface extending for a width between the side walls and forming a charge-storage layer along the side walls and bottom surface of the first trench. The method further includes implanting ions within the substrate underlying the bottom surface of the first trench to form an implant region and annealing the implant region, wherein after annealing, the implant region extends the width of the bottom surface and along a portion of the side walls.


Find Patent Forward Citations

Parikh, Suketu. (2013). Method of forming an electronic device including forming a charge storage element in a trench of a workpiece (U.S. Patent No. 8409952). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8409952

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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