The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 26, 2013

Filed:

Aug. 20, 2012
Applicants:

Nima Mokhlesi, Los Gatos, CA (US);

Henry Chin, Santa Clara, CA (US);

Masaaki Higashitani, Cupertino, CA (US);

Inventors:

Nima Mokhlesi, Los Gatos, CA (US);

Henry Chin, Santa Clara, CA (US);

Masaaki Higashitani, Cupertino, CA (US);

Assignee:

SanDick Technologies Inc., Plano, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01);
U.S. Cl.
CPC ...
Abstract

A process for programming non-volatile storage is able to achieve faster programming speeds and/or more accurate programming through synchronized coupling of neighboring word lines. The process for programming includes raising voltages for a set of word lines connected a group of connected non-volatile storage elements. The set of word lines include a selected word line, unselected word lines that are adjacent to the selected word line and other unselected word lines. After raising voltages for the set of word lines, the process includes raising the selected word line to a program voltage and raising the unselected word lines that are adjacent to the selected word line to one or more voltage levels concurrently with the raising the selected word line to the program voltage. The program voltage causes at least one of the non-volatile storage elements to experience programming.


Find Patent Forward Citations

Loading…