The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2013
Filed:
Sep. 22, 2010
Manabu Tomisaka, Nagoya, JP;
Michio Kameyama, Toyota, JP;
Terukazu Fukaya, Nagoya, JP;
Kazuhito Katoh, Inazawa, JP;
Akira Tai, Okazaki, JP;
Kazuo Akamatsu, Okazaki, JP;
Yoshiko Fukuda, Kariya, JP;
Yuji Fukuda, Osaka, JP;
Mika Ootsuki, Kariya, JP;
Manabu Tomisaka, Nagoya, JP;
Michio Kameyama, Toyota, JP;
Terukazu Fukaya, Nagoya, JP;
Kazuhito Katoh, Inazawa, JP;
Yutaka Fukuda, Kariya, JP;
Akira Tai, Okazaki, JP;
Kazuo Akamatsu, Okazaki, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
In a method of manufacturing a semiconductor device, an electrode layer is formed on a surface of a semiconductor substrate, and a resin insulation layer is formed on the surface of the semiconductor substrate so that the electrode layer can be covered with the resin insulation layer. A tapered hole is formed in the insulation layer by using a tool bit having a rake angle of zero or a negative value. The tapered hole has an opening defined by the insulation layer, a bottom defined by the electrode layer, and a side wall connecting the opening to the bottom.