The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2013
Filed:
Sep. 29, 2010
Hsin-yen Huang, Younghe, TW;
Ching-yu Lo, Hsinchu, TW;
Hai-ching Chen, Hsinchu, TW;
Tien-i Bao, Hsin-Chu, TW;
Hsin-Yen Huang, Younghe, TW;
Ching-Yu Lo, Hsinchu, TW;
Hai-Ching Chen, Hsinchu, TW;
Tien-I Bao, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
The present disclosure provides a dielectric material including a low dielectric constant material and an additive. The additive includes a compound having a Si—X—Si bridge, where X is a number of carbon atoms between 1 and 8. The additive may include terminal Si—CHgroups. The dielectric material including the additive may be used as an inter-layer dielectric (ILD) layer of a semiconductor device. The dielectric material including the additive may be formed using a CVD or sol-gel process. One example of the additive is bis(triethoxysilyl)ethene.