The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2013
Filed:
May. 09, 2011
Shigeru Tahara, Nirasaki, JP;
Naotsugu Hoshi, Nirasaki, JP;
Shigeru Tahara, Nirasaki, JP;
Naotsugu Hoshi, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A plasma ashing method is used for removing a patterned resist film in a processing chamber after etching a portion of a low-k film from an object to be processed in the processing chamber by using the patterned resist film as a mask. The method includes a first step of supplying a reaction product removal gas including at least COgas into the processing chamber, generating plasma of the reaction product removal gas by applying a high frequency power for the plasma generation, and removing reaction products deposited on an inner wall of the processing chamber; and a second step of supplying an ashing gas into the processing chamber, generating plasma of the ashing gas by applying a high frequency power for the plasma generation, and removing the resist film.