The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 26, 2013

Filed:

Sep. 25, 2007
Applicants:

Masanobu Honda, Nirasaki, JP;

Manabu Sato, Nirasaki, JP;

Yoshiki Igarashi, Nirasaki, JP;

Inventors:

Masanobu Honda, Nirasaki, JP;

Manabu Sato, Nirasaki, JP;

Yoshiki Igarashi, Nirasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/302 (2006.01); H01L 21/461 (2006.01); B23P 15/00 (2006.01); C03C 25/00 (2006.01); C03C 15/00 (2006.01); C03C 25/68 (2006.01); C23F 1/00 (2006.01); C23F 3/00 (2006.01); B44C 1/22 (2006.01);
U.S. Cl.
CPC ...
Abstract

A plasma processing method for processing a target substrate uses a plasma processing apparatus which includes a vacuum evacuable processing vessel for accommodating the target substrate therein, a first electrode disposed in the processing vessel and connected to a first RF power supply for plasma generation and a second electrode disposed to face the first electrode. The method includes exciting a processing gas containing fluorocarbon in the processing vessel to generate a plasma while applying a negative DC voltage having an absolute value ranging from about 100 V to 1500 V or an RF power of a frequency lower than about 4 MHz to the second electrode. The target layer is etched by the plasma, thus forming recesses on the etching target layer based on the pattern of the resist layer.


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