The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 26, 2013

Filed:

Feb. 13, 2009
Applicants:

Chun-lin Chang, Jhubei, TW;

Hsin-hsien Wu, Hsinchu, TW;

Zin-chang Wei, Hsin-Chu, TW;

Chi-ming Yang, Hsian-San District, TW;

Chyi-shyuan Chern, Taipei, TW;

Jun-lin Yeh, Taipei, TW;

Jih-jse Lin, Sijhih, TW;

Jo-fei Wang, Hsin-Chu, TW;

Ming-yu Fan, HsinChu County, TW;

Jong-i Mou, Hsinpu Township, Hsinchu County, TW;

Inventors:

Chun-Lin Chang, Jhubei, TW;

Hsin-Hsien Wu, Hsinchu, TW;

Zin-Chang Wei, Hsin-Chu, TW;

Chi-Ming Yang, Hsian-San District, TW;

Chyi-Shyuan Chern, Taipei, TW;

Jun-Lin Yeh, Taipei, TW;

Jih-Jse Lin, Sijhih, TW;

Jo-Fei Wang, Hsin-Chu, TW;

Ming-Yu Fan, HsinChu County, TW;

Jong-I Mou, Hsinpu Township, Hsinchu County, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/425 (2006.01);
U.S. Cl.
CPC ...
Abstract

An apparatus includes a process chamber configured to perform an ion implantation process. A cooling platen or electrostatic chuck is provided within the process chamber. The cooling platen or electrostatic chuck is configured to support a semiconductor wafer. The cooling platen or electrostatic chuck has a plurality of temperature zones. Each temperature zone includes at least one fluid conduit within or adjacent to the cooling platen or electrostatic chuck. At least two coolant sources are provided, each fluidly coupled to a respective one of the fluid conduits and configured to supply a respectively different coolant to a respective one of the plurality of temperature zones during the ion implantation process. The coolant sources include respectively different chilling or refrigeration units.


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