The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 19, 2013

Filed:

Aug. 10, 2011
Applicants:

Serguei Anikitchev, Belmont, CA (US);

James T. Mcwhirter, San Jose, CA (US);

Joseph E. Gortych, Sarasota, FL (US);

Inventors:

Serguei Anikitchev, Belmont, CA (US);

James T. McWhirter, San Jose, CA (US);

Joseph E. Gortych, Sarasota, FL (US);

Assignee:

Ultratech, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H05B 7/18 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Systems and methods for forming a time-average line image are disclosed. The method includes forming a line image with a first amount of intensity non-uniformity. The method also includes forming and scanning a secondary image over at least a portion of the line image to form a time-averaged modified line image having a second amount of intensity non-uniformity that is less than the first amount. Wafer emissivity is measured in real time to control the intensity of the secondary image. Temperature is also measured in real time based on the wafer emissivity and reflectivity of the secondary image, and can be used to control the intensity of the secondary image.


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