The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2013
Filed:
Dec. 28, 2007
Maud Vinet, Rives, FR;
Olivier Thomas, Revel, FR;
Olivier Rozeau, Moirans, FR;
Thierry Poiroux, Voreppe, FR;
Maud Vinet, Rives, FR;
Olivier Thomas, Revel, FR;
Olivier Rozeau, Moirans, FR;
Thierry Poiroux, Voreppe, FR;
Commissariat a l'Energie Atomique, Paris, JP;
Abstract
A method for making a microelectronic device with one or plural double-gate transistors, including: a) forming one or plural structures on a substrate including at least one first block configured to form a first gate of a double-gate transistor, and at least a second block configured to form the second gate of the double-gate, the first block and the second block being located on opposite sides of at least one semiconducting zone and separated from the semiconducting zone by a first gate dielectric zone and a second gate dielectric zone respectively; and b) doping at least one or plural semiconducting zones in the second block of at least one given structure among the structures, using at least a first implantation selective relative to the first block, the implantation being done on a first side of the given structure, the part of the structure on the other side of the normal to the principal plane of the substrate passing through the semiconducting zone not being implanted.