The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2013
Filed:
Nov. 08, 2010
Wai-kin LI, Beacon, NY (US);
Wu-song Huang, Brewster, NY (US);
Dario Leonardo Goldfarb, Dobbs Ferry, NY (US);
Martin Glodde, Mahwah, NJ (US);
Edward Engbrecht, Hopewell Junction, NY (US);
Yiheng Xu, Hopewell Junction, NY (US);
Wai-Kin Li, Beacon, NY (US);
Wu-Song Huang, Brewster, NY (US);
Dario Leonardo Goldfarb, Dobbs Ferry, NY (US);
Martin Glodde, Mahwah, NJ (US);
Edward Engbrecht, Hopewell Junction, NY (US);
Yiheng Xu, Hopewell Junction, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of improving the focus leveling response of a semiconductor wafer is described. The method includes combining organic and inorganic or metallic near infrared (NIR) hardmask on a semiconductor substrate; forming an anti-reflective coating (ARC) layer on the combined organic NIR-absorption and the inorganic or metallic NIR-absorption hardmask; and forming a photoresist layer on the ARC layer. A semiconductor structure is also described including a substrate, a resist layer located over the structure; and an absorptive layer located over the substrate. The absorptive layer includes an inorganic or metallic NIR-absorbing hardmask layer.