The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2013
Filed:
Jun. 06, 2011
Mark A. Prelas, Columbia, MO (US);
Tushar K. Ghos, Columbia, MO (US);
Robert V. Tompson, Jr., Columbia, MO (US);
Dabir S. Viswanath, Columbia, MO (US);
Sudarshan Loyalka, Columbia, MO (US);
Mark A. Prelas, Columbia, MO (US);
Tushar K. Ghos, Columbia, MO (US);
Robert V. Tompson, Jr., Columbia, MO (US);
Dabir S. Viswanath, Columbia, MO (US);
Sudarshan Loyalka, Columbia, MO (US);
The Curators of the University of Missouri, Columbia, MO (US);
Abstract
Various embodiments of the present disclosure provide a method of simultaneously co-doping a wide band gap material with p-type and n-type impurities to create a p-n junction within the resulting wide band gap composite material. The method includes disposing a sample comprising a dopant including both p-type and n-type impurities between a pair of wide band gap material films and disposing the sample between a pair of opposing electrodes; and subjecting the sample to a preselected vacuum; and heating the sample to a preselected temperature; and applying a preselected voltage across the sample; and subjecting the sample to at least one laser beam having a preselected intensity and a preselected wavelength, such that the p-type and n-type impurities of the dopant substantially simultaneously diffuse into the wide band gap material films resulting in a wide band gap compound material comprising a p-n junction.