The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 05, 2013

Filed:

Apr. 20, 2010
Applicants:

David Ross Mcgregor, Apex, NC (US);

Cheong-wo Hunter Chan, Lawrenceville, GA (US);

Lynne E. Dellis, Willow Spring, NC (US);

Fuhan Liu, Atlanta, GA (US);

Deepukumar M. Nair, Cary, NC (US);

Venkatesh Sundaram, Alpharetta, GA (US);

Inventors:

David Ross McGregor, Apex, NC (US);

Cheong-Wo Hunter Chan, Lawrenceville, GA (US);

Lynne E. Dellis, Willow Spring, NC (US);

Fuhan Liu, Atlanta, GA (US);

Deepukumar M. Nair, Cary, NC (US);

Venkatesh Sundaram, Alpharetta, GA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/86 (2006.01); H01L 21/768 (2006.01); H01L 21/50 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
Abstract

Provided are semiconductor packages comprising at least one thin-film capacitor attached to a printed wiring board core through build-up layers, wherein a first electrode of the thin-film capacitor comprises a thin nickel foil, a second electrode of the thin-film capacitor comprises a copper electrode, and a copper layer is formed on the nickel foil. The interconnections between the thin-film capacitor and the semiconductor device provide a low inductance path to transfer charge to and from the semiconductor device. Also provided are methods for fabricating such semiconductor packages.


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