The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2013
Filed:
Jul. 12, 2007
Yoshinori Shishida, Gifu, JP;
Shinichi Chikaki, Tokyo, JP;
Ryotaro Yagi, Shizuoka, JP;
Kazuo Kohmura, Chiba, JP;
Hirofumi Tanaka, Chiba, JP;
Yoshinori Shishida, Gifu, JP;
Shinichi Chikaki, Tokyo, JP;
Ryotaro Yagi, Shizuoka, JP;
Kazuo Kohmura, Chiba, JP;
Hirofumi Tanaka, Chiba, JP;
Abstract
A semiconductor device capable of improving a mechanical strength of a porous silica film while inhibiting a film located on a lower layer of the porous silica film from deterioration is obtained. This semiconductor device includes an organic film formed on a semiconductor substrate, an ultraviolet light permeation suppressive film, formed on a surface of the organic film, composed of a material which is difficult to be permeable by ultraviolet light, and a first porous silica film formed on a surface of the ultraviolet light permeation suppressive film.