The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 26, 2013

Filed:

Sep. 24, 2009
Applicants:

Ting-sheng Chen, Hsinchu, TW;

Yung-fa Chou, Kaohsiung, TW;

Ding-ming Kwai, Hsinchu County, TW;

Inventors:

Ting-Sheng Chen, Hsinchu, TW;

Yung-Fa Chou, Kaohsiung, TW;

Ding-Ming Kwai, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

A wafer and a method for improving the yield rate of the wafer are provided. The wafer includes a first and a second circuit units, a first and a second through silicon vias (TSVs), and a first spare TSV. The first and the second circuit units are disposed inside the wafer. The first TSV vertically runs through the wafer and is coupled to the first circuit unit through the front metal of the wafer. The second TSV vertically passes through the wafer and is coupled to the second circuit unit through the front metal of the wafer. When the first or the second TSV has failed, the first spare TSV vertically passes through the wafer to replace the failed first or second TSV.


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