The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2013
Filed:
Apr. 22, 2010
Mahito Sawada, Tokyo, JP;
Tatsunori Kaneoka, Tokyo, JP;
Katsuyuki Horita, Tokyo, JP;
Renesas Electronics Corporation, Tokyo, JP;
Abstract
To provide a semiconductor device provided with an element isolation structure capable of hindering an adverse effect on electric characteristics of a semiconductor element, and a method of manufacturing the same. The thickness of a first silicon oxide film left in a shallow trench isolation having a relatively narrow width is thinner than the first silicon oxide film left in a shallow trench isolation having a relatively wide width. A second silicon oxide film (an upper layer) having a relatively high compressive stress by an HDP-CVD method is more thickly laminated over the first silicon oxide film in a lower layer by a thinned thickness of the first silicon oxide film. The compressive stress of an element isolation oxide film finally formed in a shallow trench isolation having a relatively narrow width is more enhanced.