The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2013
Filed:
Jan. 17, 2012
Kaushik Chanda, Fishkill, NY (US);
Cathryn J. Christiansen, Huntington, VT (US);
Daniel C. Edelstein, White Plains, NY (US);
Satyanarayana V. Nitta, Poughquag, NY (US);
Son V. Nguyen, Schenectady, NY (US);
Shom Ponoth, Clifton Park, NY (US);
Hosadurga Shobha, Niskayuna, NY (US);
Kaushik Chanda, Fishkill, NY (US);
Cathryn J. Christiansen, Huntington, VT (US);
Daniel C. Edelstein, White Plains, NY (US);
Satyanarayana V. Nitta, Poughquag, NY (US);
Son V. Nguyen, Schenectady, NY (US);
Shom Ponoth, Clifton Park, NY (US);
Hosadurga Shobha, Niskayuna, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A metal interconnect structure includes at least a pair of metal lines, a cavity therebetween, and a dielectric metal-diffusion barrier layer located on at least one portion of walls of the cavity. After formation of a cavity between the pair of metal lines, the dielectric metal-diffusion barrier layer is formed on the exposed surfaces of the cavity. A dielectric material layer is formed above the pair of metal lines to encapsulate the cavity. The dielectric metal-diffusion barrier layer prevents diffusion of metal and impurities from one metal line to another metal line and vice versa, thereby preventing electrical shorts between the pair of metal lines.