The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 19, 2013

Filed:

Sep. 29, 2010
Applicants:

Han-guan Chew, Singapore, SG;

Lee-wee Teo, Singapore, SG;

Ming Zhu, Singapore, SG;

Bao-ru Young, Zhubei, TW;

Harry-hak-lay Chuang, Hsinchu, TW;

Inventors:

Han-Guan Chew, Singapore, SG;

Lee-Wee Teo, Singapore, SG;

Ming Zhu, Singapore, SG;

Bao-Ru Young, Zhubei, TW;

Harry-Hak-Lay Chuang, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

The applications discloses a semiconductor device comprising a substrate having a first active region, a second active region, and an isolation region having a first width interposed between the first and second active regions; a P-metal gate electrode over the first active region and extending over at least ⅔ of the first width of the isolation region; and an N-metal gate electrode over the second active region and extending over no more than ⅓ of the first width. The N-metal gate electrode is electrically connected to the P-metal gate electrode over the isolation region.


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