The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 19, 2013

Filed:

Feb. 17, 2010
Applicants:

Yasuhiro Satoh, Yokohama, JP;

Tsukasa Nakai, Hino, JP;

Kazuhiko Yamamoto, Yokohama, JP;

Motoya Kishida, Yokohama, JP;

Hiroyuki Fukumizu, Yokohama, JP;

Yasuhiro Nojiri, Yokohama, JP;

Inventors:

Yasuhiro Satoh, Yokohama, JP;

Tsukasa Nakai, Hino, JP;

Kazuhiko Yamamoto, Yokohama, JP;

Motoya Kishida, Yokohama, JP;

Hiroyuki Fukumizu, Yokohama, JP;

Yasuhiro Nojiri, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

This nonvolatile semiconductor memory device comprises a memory cell array including memory cells arranged therein. Each of the memory cells is located at respective intersections between first wirings and second wirings and includes a variable resistance element. The variable resistance element comprises a thin film including carbon (C). The thin film includes a side surface along a direction of a current flowing in the memory cell. The side surface includes carbon nitride (CN).


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