The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2013
Filed:
May. 29, 2011
Applicants:
Hsiu-chun Lee, Taipei, TW;
Yi-nan Chen, Taipei, TW;
Hsien-wen Liu, Taoyuan County, TW;
Inventors:
Assignee:
Nanya Technology Corp., Kueishan, Tao-Yuan Hsien, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/26 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention provides a method of reducing microloading effect by using a photoresist layer as a buffer. The method includes: providing a substrate defined with a dense region and an isolated region. Then, a dense feature pattern and an isolated feature pattern are formed on the dense region and the isolated region respectively. After that, a photoresist layer is formed to cover the isolated region. Finally, the substrate and the photoresist layer are etched by taking the dense feature pattern and the isolated feature pattern as a mask.