The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2013
Filed:
Mar. 28, 2008
Applicants:
Yoshiro Kabe, Amagasaki, JP;
Takashi Kobayashi, Amagasaki, JP;
Toshihiko Shiozawa, Amagasaki, JP;
Junichi Kitagawa, Amagasaki, JP;
Inventors:
Yoshiro Kabe, Amagasaki, JP;
Takashi Kobayashi, Amagasaki, JP;
Toshihiko Shiozawa, Amagasaki, JP;
Junichi Kitagawa, Amagasaki, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01);
U.S. Cl.
CPC ...
Abstract
A silicon oxide film is formed in a processing chamber of a plasma processing apparatus by performing oxidation process, by using plasma to a processing object having a patterned irregularity, wherein the plasma is generated while high-frequency power is supplied to a mount table under the conditions that the oxygen content in a process gas is not less than 0.5% and less than 10% and the process pressure is 1.3 to 665 Pa.