The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2013
Filed:
Oct. 11, 2011
Franz Hirler, Isen, DE;
Walter Rieger, Arnoldstein, AT;
Andrew Wood, Villach-Landskron, AT;
Mathias Born, Unterfoehring, DE;
Ralf Siemieniec, Villach, AT;
Jan Ropohl, Regensburg, DE;
Martin Poelzl, Ossiach, AT;
Oliver Blank, Freising, DE;
Uli Hiller, Bad Abbach, DE;
Oliver Haeberlein, Villach, AT;
Rudolf Zelsacher, Klagenfurt, AT;
Maximilian Roesch, Villach-St. Ulrich, AT;
Joachim Krumrey, Goedersdorf, AT;
Franz Hirler, Isen, DE;
Walter Rieger, Arnoldstein, AT;
Andrew Wood, Villach-Landskron, AT;
Mathias Born, Unterfoehring, DE;
Ralf Siemieniec, Villach, AT;
Jan Ropohl, Regensburg, DE;
Martin Poelzl, Ossiach, AT;
Oliver Blank, Freising, DE;
Uli Hiller, Bad Abbach, DE;
Oliver Haeberlein, Villach, AT;
Rudolf Zelsacher, Klagenfurt, AT;
Maximilian Roesch, Villach-St. Ulrich, AT;
Joachim Krumrey, Goedersdorf, AT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
In one embodiment, a field effect transistor has a semiconductor body, a drift region of a first conductivity type and a gate electrode. At least one trench extends into the drift region. A field plate is arranged at least in a portion of the at least one trench. A dielectric material at least partially surrounds both the gate electrode and the field plate. The field plate includes a first semiconducting material.