The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2013
Filed:
May. 20, 2010
Kwangduk Douglas Lee, Redwood City, CA (US);
Martin Jay Seamons, San Jose, CA (US);
Sudha Rathi, San Jose, CA (US);
Chiu Chan, Foster City, CA (US);
Michael H. Lin, San Jose, CA (US);
Kwangduk Douglas Lee, Redwood City, CA (US);
Martin Jay Seamons, San Jose, CA (US);
Sudha Rathi, San Jose, CA (US);
Chiu Chan, Foster City, CA (US);
Michael H. Lin, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of forming an amorphous carbon layer on a substrate in a substrate processing chamber, includes introducing a hydrocarbon source into the processing chamber, introducing argon, alone or in combination with helium, hydrogen, nitrogen, and combinations thereof, into the processing chamber, wherein the argon has a volumetric flow rate to hydrocarbon source volumetric flow rate ratio of about 10:1 to about 20:1, generating a plasma in the processing chamber at a substantially lower pressure of about 2 Torr to 10 Torr, and forming a conformal amorphous carbon layer on the substrate.