The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 22, 2013

Filed:

Feb. 06, 2009
Applicants:

Cheng-chou Hung, Hsinchu County, TW;

Victor-chiang Liang, Hsin-Chu, TW;

Jui-meng Jao, Miao-Li Hsien, TW;

Cheng-hung LI, Kaohsiung County, TW;

Sheng-yi Huang, Hsinchu County, TW;

Tzung-lin LI, Pingtung County, TW;

Huai-wen Zhang, Taoyuan County, TW;

Chih-yu Tseng, Hsinchu, TW;

Inventors:

Cheng-Chou Hung, Hsinchu County, TW;

Victor-Chiang Liang, Hsin-Chu, TW;

Jui-Meng Jao, Miao-Li Hsien, TW;

Cheng-Hung Li, Kaohsiung County, TW;

Sheng-Yi Huang, Hsinchu County, TW;

Tzung-Lin Li, Pingtung County, TW;

Huai-Wen Zhang, Taoyuan County, TW;

Chih-Yu Tseng, Hsinchu, TW;

Assignee:

United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01);
U.S. Cl.
CPC ...
Abstract

A die seal ring disposed outside of a die region of a semiconductor substrate is disclosed. The die seal ring includes a first isolation structure, a second isolation structure, and at least one third isolation structure disposed between the first isolation structure and the second isolation structure; a plurality of first regions between the first isolation structure, the second isolation structure and the third isolation structure; a second region under the first region and the third isolation structure; and a third region under the first isolation structure.


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