The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2013
Filed:
Oct. 24, 2008
Christopher Dennis Bencher, San Jose, CA (US);
Huixiong Dai, San Jose, CA (US);
LI Yan Miao, San Francisco, CA (US);
Hao Chen, Santa Clara, CA (US);
Christopher Dennis Bencher, San Jose, CA (US);
Huixiong Dai, San Jose, CA (US);
Li Yan Miao, San Francisco, CA (US);
Hao Chen, Santa Clara, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method for doubling the frequency of a lithographic process using a photo-resist template mask is described. A device layer having a photo-resist layer formed thereon is first provided. The photo-resist layer is patterned to form a photo-resist template mask. A spacer-forming material layer is deposited over the photo-resist template mask. The spacer-forming material layer is etched to form a spacer mask and to expose the photo-resist template mask. The photo-resist template mask is then removed and an image of the spacer mask is finally transferred to the device layer.