The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2013
Filed:
Jun. 30, 2008
Yuki Chiba, Albany, NY (US);
Eiichi Nishimura, Nirasaki, JP;
Ryuichi Asako, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
The present invention is an apparatus for manufacturing a semiconductor device comprising: a process vessel including a stage on which a substrate is placed, the substrate having a low dielectric constant film with a resist pattern being formed in an upper layer of the low dielectric constant film; an etching-gas supply unit that supplies an etching gas into the process vessel so as to etch the low dielectric constant film; an ashing-gas unit means that supplies an ashing gas into the process vessel so as to ash the resist pattern formed in the upper layer of the low dielectric constant film after the low dielectric constant film has been subjected to an etching process; a plasma generating means that generates a plasma by supplying an energy to the etching gas and the ashing gas in the process vessel; a unit that supplies a dipivaloylmethane gas into the process vessel, after the low dielectric constant film has been subjected to an ashing process, in order to recover a damage layer of the low dielectric constant film which has been damaged by the plasma; and a heating unit that enables the dipivaloylmethane gas to come into contact with a surface of the substrate under a heated condition.