The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 15, 2013

Filed:

Aug. 30, 2011
Applicants:

Pil-kyu Kang, Anyang-si, KR;

Gil-heyun Choi, Seoul, KR;

Dae-lok Bae, Seoul, KR;

Byung-lyul Park, Seoul, KR;

Dong-kak Lee, Seoul, KR;

Inventors:

Pil-kyu Kang, Anyang-si, KR;

Gil-heyun Choi, Seoul, KR;

Dae-lok Bae, Seoul, KR;

Byung-lyul Park, Seoul, KR;

Dong-kak Lee, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
Abstract

A conductive layer buried-type substrate is disclosed. The substrate includes a silicon oxidation layer bonded to a supporting substrate, an adhesion promotion layer that is formed on the silicon oxidation layer and improves an adhesion between the silicon oxidation layer and a conductive layer, wherein the conductive layer is formed on the adhesion promotion layer and comprises a metal layer, and a single crystal semiconductor layer formed on the conductive layer.


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