The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2013
Filed:
Feb. 23, 2010
BO Xie, Sunnyvale, CA (US);
Alexandros T. Demos, Fremont, CA (US);
Daemian Raj, San Jose, CA (US);
Sure Ngo, Dublin, CA (US);
Kang Sub Yim, Santa Clara, CA (US);
Bo Xie, Sunnyvale, CA (US);
Alexandros T. Demos, Fremont, CA (US);
Daemian Raj, San Jose, CA (US);
Sure Ngo, Dublin, CA (US);
Kang Sub Yim, Santa Clara, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments of the present invention pertain to the formation of microelectronic structures. Low k dielectric materials need to exhibit a dielectric constant of less than about 2.6 for the next technology node of 32 nm. The present invention enables the formation of semiconductor devices which make use of such low k dielectric materials while providing an improved flexural and shear strength integrity of the microelectronic structure as a whole.