The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2012
Filed:
Jan. 09, 2008
Applicants:
Michael A. Briere, Woonsocket, RI (US);
Paul Bridger, Sleepy Hollow, NY (US);
Jianjun Cao, Torrance, CA (US);
Inventors:
Michael A. Briere, Woonsocket, RI (US);
Paul Bridger, Sleepy Hollow, NY (US);
Jianjun Cao, Torrance, CA (US);
Assignee:
International Rectifier Corporation, El Segundo, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract
A III-nitride heterojunction power semiconductor device that includes a passivation body with a gate well having a top mouth that is wider than the bottom mouth thereof, and a method of fabrication for the same.
Briere, Michael. (2012). Iii-nitride semiconductor device with stepped gate trench and process for its manufacture (U.S. Patent No. 8338861). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8338861
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile