The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2012
Filed:
May. 19, 2011
Vijay Parihar, Fremont, CA (US);
Christopher Dennis Bencher, San Jose, CA (US);
Rajesh Kanuri, Santa Clara, CA (US);
Marlon E. Menezes, Mountain View, CA (US);
Vijay Parihar, Fremont, CA (US);
Christopher Dennis Bencher, San Jose, CA (US);
Rajesh Kanuri, Santa Clara, CA (US);
Marlon E. Menezes, Mountain View, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A plasma enhanced physical vapor deposition process deposits an amorphous carbon layer on an ion-implanted wafer for use in dynamic surface annealing of the wafer with an intense line beam of a laser wavelength. The deposition process is carried out at a wafer temperature below the dopant clustering threshold temperature, and includes introducing the wafer into a chamber having a carbon-containing target overlying the wafer, and furnishing a carrier gas into the chamber. The process further includes generating a wafer bias voltage and applying target source power to the carbon-containing target sufficient to produce ion bombardment of the carbon-containing target. The wafer bias voltage is set to a level at which the amorphous carbon layer that is deposited has a desired extinction coefficient at the laser wavelength.