The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2012
Filed:
Jun. 29, 2010
Tsukasa Nakai, Hino, JP;
Hiroyuki Fukumizu, Yokohama, JP;
Yasuhiro Nojiri, Yokohama, JP;
Motoya Kishida, Yokohama, JP;
Kazuyuki Yahiro, Kawasaki, JP;
Yasuhiro Satoh, Fujisawa, JP;
Tsukasa Nakai, Hino, JP;
Hiroyuki Fukumizu, Yokohama, JP;
Yasuhiro Nojiri, Yokohama, JP;
Motoya Kishida, Yokohama, JP;
Kazuyuki Yahiro, Kawasaki, JP;
Yasuhiro Satoh, Fujisawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a variable resistance layer includes a mixture of a first compound and a second compound. The first compound includes carbon (C) as well as at least one element selected from a group of elements G. The group of elements Gconsists of hydrogen (H), boron (B), nitrogen (N), silicon (Si), and titanium (Ti). The second compound includes at least one compound selected from a group of compounds G. The group of compounds Gconsists of silicon oxide (SiO), silicon oxynitride (SiON), silicon nitride (SiN), carbon nitride (CN), boron nitride (BN), aluminum nitride (AlN), aluminum oxide (AlO), and silicon carbide (SiC). Concentration of the first compound in the variable resistance layer is not less than 30 volume percent, and not more than 70 volume percent.