The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2012
Filed:
Mar. 07, 2011
Chan-lon Yang, Taipei, TW;
Shih-fang Tzou, Hsinchu County, TW;
Chen-kuo Chiang, Tainan, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A semiconductor process having a dielectric layer including metal oxide is provided. The semiconductor process includes: A substrate is provided. A dielectric layer including metal oxide is formed on the substrate, wherein the dielectric layer has a plurality of oxygen-related vacancies. A first oxygen-importing process is performed to fill the oxygen-related vacancies with oxygen. Otherwise, three MOS transistor processes are also provided, each of which has a gate dielectric layer including a high dielectric constant, and a first oxygen-importing process is performed to fill the oxygen-related vacancies with oxygen.