The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2012
Filed:
May. 12, 2010
Adam Brailove, San Jose, CA (US);
Zuqin Liu, Palo Alto, CA (US);
Francois J. Henley, Aptos, CA (US);
Albert J. Lamm, Suisun City, CA (US);
Adam Brailove, San Jose, CA (US);
Zuqin Liu, Palo Alto, CA (US);
Francois J. Henley, Aptos, CA (US);
Albert J. Lamm, Suisun City, CA (US);
Silicon Genesis Corporation, San Jose, CA (US);
Abstract
Embodiments of the present invention relate to the use of a particle accelerator beam to form thin films of material from a bulk substrate. In particular embodiments, a bulk substrate having a top surface is exposed to a beam of accelerated particles. Then, a thin film of material is separated from the bulk substrate by performing a controlled cleaving process along a cleave region formed by particles implanted from the beam. To improve uniformity of depth of implantation, channeling effects are reduced by one or more techniques. In one technique, a miscut bulk substrate is subjected to the implantation, such that the lattice of the substrate is offset at an angle relative to the impinging particle beam. According to another technique, the substrate is tilted at an angle relative to the impinging particle beam. In still another technique, the substrate is subjected to a dithering motion during the implantation. These techniques may be employed alone or in combination.