The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2012
Filed:
Nov. 02, 2006
Ralf Otremba, Kaufbeuren, DE;
Daniel Kraft, Klagenfurt-Viktring, AT;
Alexander Komposch, Morgan Hill, CA (US);
Hannes Eder, Villach, AT;
Paul Ganitzer, Villach, AT;
Stefan Woehlert, Villach, AT;
Ralf Otremba, Kaufbeuren, DE;
Daniel Kraft, Klagenfurt-Viktring, AT;
Alexander Komposch, Morgan Hill, CA (US);
Hannes Eder, Villach, AT;
Paul Ganitzer, Villach, AT;
Stefan Woehlert, Villach, AT;
Infineon Technologies AG, Munich, DE;
Abstract
A semiconductor chip () is provided having an adhesion-promoting-layer-free three-layer metallization (). The three-layer metallization () has an aluminum layer () applied directly on the semiconductor chip (), a diffusion barrier layer () applied directly on the aluminum layer (), and a solder layer () applied directly on the diffusion barrier layer (). Ti, Ni, Pt or Cr is provided as the diffusion barrier layer () and a diffusion solder layer is provided as the solder layer (). All three layers are applied by sputtering in a process sequence.