The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2012
Filed:
Apr. 25, 2011
Ted Ming-lang Guo, Tainan, TW;
Chin-cheng Chien, Tainan, TW;
Shu-yen Chan, Changhua County, TW;
Chan-lon Yang, Taipei, TW;
Chun-yuan Wu, Yunlin County, TW;
Ted Ming-Lang Guo, Tainan, TW;
Chin-Cheng Chien, Tainan, TW;
Shu-Yen Chan, Changhua County, TW;
Chan-Lon Yang, Taipei, TW;
Chun-Yuan Wu, Yunlin County, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method of fabricating a semiconductor structure, in which after an etching process is performed to form at least one recess within a semiconductor beside a gate structure, a thermal treatment is performed on the recess in a gas atmosphere including an inert gas before a silicon-containing epitaxial layer is formed in the recess through an epitaxy growth process.