The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2012
Filed:
May. 11, 2011
Tong Fang, Palo Alto, CA (US);
Yunsang S. Kim, Monte Sereno, CA (US);
Andreas Fischer, Castro Valley, CA (US);
Tong Fang, Palo Alto, CA (US);
Yunsang S. Kim, Monte Sereno, CA (US);
Andreas Fischer, Castro Valley, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method of bevel edge processing a semiconductor in a bevel plasma processing chamber in which the semiconductor substrate is supported on a semiconductor substrate support is provided. The method comprises evacuating the bevel etcher to a pressure of 3 to 100 Torr and maintaining RF voltage under a threshold value; flowing a process gas into the bevel plasma processing chamber; energizing the process gas into a plasma at a periphery of the semiconductor substrate; and bevel processing the semiconductor substrate with the plasma.