The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2012
Filed:
Apr. 28, 2009
Laure Libralesso, Vif, FR;
Hubert Moriceau, Saint-Egreve, FR;
Christophe Morales, St Pierre de Mesage, FR;
François Rieutord, Saint-Egreve, FR;
Caroline Ventosa, Fontaine, FR;
Thierry Chevolleau, Grenoble, FR;
Laure Libralesso, Vif, FR;
Hubert Moriceau, Saint-Egreve, FR;
Christophe Morales, St Pierre de Mesage, FR;
François Rieutord, Saint-Egreve, FR;
Caroline Ventosa, Fontaine, FR;
Thierry Chevolleau, Grenoble, FR;
Abstract
Two plates, each comprising a thin layer of silicon or silicon oxide at a surface thereof, are bonded by subjecting the thin layer of at least one of the plates to a surface treatment step forming a silicon oxynitride superficial thin film with a thickness of less than 5nm. The thin film is performed with a nitrogen-based plasma generated by an inductively coupled plasma source. Furthermore, a potential difference applied between the plasma and a substrate holder supporting said plate during the surface treatment step is less than 50 V, advantageously less than 15 V and preferably zero. This enables a defect-free bonding interface to be obtained irrespective of a temperature of any heat treatment carried out after a contacting step between the respective thin layers of the two plates.