The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2012
Filed:
Jan. 28, 2010
David F. Abdo, Scottsdale, AZ (US);
Monte G. Miller, Phoenix, AZ (US);
Lakshminarayan Viswanathan, Phoenix, AZ (US);
David F. Abdo, Scottsdale, AZ (US);
Monte G. Miller, Phoenix, AZ (US);
Lakshminarayan Viswanathan, Phoenix, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A method of making a mounted gallium nitride (GaN) device includes obtaining a device structure comprising a silicon layer, a silicon carbide (SiC) layer over the silicon layer, and a GaN layer over the SiC layer. The GaN layer is processed to form an active layer of active devices and interconnect over the GaN layer. After the step of processing the GaN layer, a gold layer is formed on the silicon layer. The device structure is attached to a heat sink structure using the gold layer. The mounted GaN device includes the SiC layer over the polysilicon layer and the GaN layer over the SiC layer. The active layer is over the GaN layer.