The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2012
Filed:
Jan. 06, 2011
Hui-min Wu, Hsinchu County, TW;
Bang-chiang Lan, Taipei, TW;
Chien-hsin Huang, Taichung, TW;
Kuan-yu Wang, Taipei County, TW;
Chao-an Su, Kaohsiung County, TW;
Tzung-i Su, Yun-Lin County, TW;
Hui-Min Wu, Hsinchu County, TW;
Bang-Chiang Lan, Taipei, TW;
Chien-Hsin Huang, Taichung, TW;
Kuan-Yu Wang, Taipei County, TW;
Chao-An Su, Kaohsiung County, TW;
Tzung-I Su, Yun-Lin County, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A fabrication method of a wafer structure includes: providing a substrate having a plurality of die regions and an edge region surrounding the die regions defined thereon; then, forming a dielectric layer, a plurality of MEMS devices, a plurality of metal-interconnect structures and a plurality bonding pads on the substrate in the die regions; next, removing the dielectric layer disposed on the substrate of the edge region to expose the substrate; and thereafter, forming a passivation layer to cover the substrate and the dielectric layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile