The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2012
Filed:
Apr. 13, 2010
Guang-yaw Hwang, Tainan County, TW;
Yu-ru Yang, Hsinchu County, TW;
Jiunn-hsiung Liao, Tainan Hsien, TW;
Pei-yu Chou, Tainan County, TW;
Guang-Yaw Hwang, Tainan County, TW;
Yu-Ru Yang, Hsinchu County, TW;
Jiunn-Hsiung Liao, Tainan Hsien, TW;
Pei-Yu Chou, Tainan County, TW;
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
A semiconductor device includes a semiconductor substrate, a gate dielectric layer formed on the semiconductor substrate, and at least a first conductive-type metal gate formed on the gate dielectric layer. The first conductive-type metal gate includes a filling metal layer and a U-type metal layer formed between the filling metal layer and the gate dielectric layer. A topmost portion of the U-type metal layer is lower than the filling metal layer.