The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 13, 2012

Filed:

Aug. 31, 2010
Applicants:

Jun Hirota, Kanagawa-ken, JP;

Yoko Iwakaji, Kanagawa-ken, JP;

Moto Yabuki, Tokyo, JP;

Inventors:

Jun Hirota, Kanagawa-ken, JP;

Yoko Iwakaji, Kanagawa-ken, JP;

Moto Yabuki, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/12 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

According to one embodiment, a semiconductor memory device includes a word line interconnection layer, a bit line interconnection layer and a pillar. The word line interconnection layer includes a plurality of word lines which extend in a first direction. The bit line interconnection layer includes a plurality of bit lines which extend in a second direction crossing over the first direction. The pillar is arranged between each of the word lines and each of the bit lines. The pillar includes a silicon diode and a variable resistance film, and the silicon diode includes a p-type portion and an n-type portion. The word line interconnection layer and the bit line interconnection layer are alternately stacked, and a compressive force is applied to the silicon diode in a direction in which the p-type portion and the n-type portion become closer to each other.


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