The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2012
Filed:
Feb. 09, 2010
Seiko Omori, Ashiya, JP;
Zhaohui Cheng, Tokyo, JP;
Hideyuki Kazumi, Hitachinaka, JP;
Hitachi High-Technologies Corporation, Tokyo, JP;
Abstract
Provided is a sample observing method wherein the effect on throughput is minimized, and a pattern profile can be obtained at high accuracy even in a complicated LSI pattern, regardless of the scanning direction of an electron beam. In the sample observing method, the presence or absence of an edge parallel to a scanning direction () of an electron beam is judged regarding an edge () of a pattern to be observed (S); if the edge is present, an area in the vicinity of the pattern edge is designated as a local pre-dose area () (S); a local pre-dose of an electron beam is performed, so that the initial charged state is controlled not to return secondary electrons generated by irradiation of an electron beam when an image is captured, to the surface of a sample.