The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2012
Filed:
Dec. 23, 2009
Sun-hwan Hwang, Gyeonggi-do, KR;
Se-aug Jang, Gyeonggi-do, KR;
Kee-joon OH, Gyeonggi-do, KR;
Soon-young Park, Gyeonggi-do, KR;
Sun-Hwan Hwang, Gyeonggi-do, KR;
Se-Aug Jang, Gyeonggi-do, KR;
Kee-Joon Oh, Gyeonggi-do, KR;
Soon-Young Park, Gyeonggi-do, KR;
Hynix Semiconductor, Inc., Gyeonggi-do, KR;
Abstract
Provided is a method for forming a buried word line in a semiconductor device. The method includes forming a trench by etching a pad layer and a substrate, forming a conductive layer to fill the trench, planarizing the conductive layer until the pad layer is exposed, performing an etch-back process on the planarized conductive layer, and performing an annealing process in an atmosphere of a nitride-based gas after at least one of the forming of the conductive layer, the planarizing of the conductive layer, and the performing of the etch-back process on the planarized conductive layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile